Temperature dependence of photoluminescence from Γ–Γ and Γ–X minibands in lattice matched InGaAs/InP superlattices

The effects of temperature on the optical properties of lattice matched InGaAs/InP superlattices are reported. We found that the PL spectra are dominated by the recombination of carriers in the lowest energy minibands formed by – and –X. Effects of temperature on the contribution of each of these minibands are analyzed using two distinct models, proposed by Varshni and Viña. The Debye temperature of the material was estimated to be 356 K and small values of the Varshni parameter α demonstrated that InGaAs/InP superlattices are an attractive system for high operating temperature devices. Additionally, the fit of experimental data by Viña's model provided an estimate of the strength of the exciton-average phonon.