The evolution of vacancy-type defects in silicon-on-insulator structures studied by positron annihilation spectroscopy

Variable-energy positron annihilation spectroscopy (VEPAS) has been applied to the study of the formation and evolution of vacancy-type defect structures in silicon (Si) and the 1.5 μm thick Si top layer of silicon-on-insulator (SOI) samples. The samples were implanted with 2 MeV Si ions at fluences between 1013 and 1015 cm−2, and probed in the as-implanted state and after annealing for 30 min at temperatures between 350 and 800 °C. In the case …