Role of vacancy-type defects in the formation of silicon nanocrystals

The location and size distribution of silicon nanocrystals (Si-nc) formed in SiO2 by Si ion implantation and annealing were investigated. Transmission electron microscopy images revealed that the location and size distribution of the Si-nc are strongly correlated with the location of the vacancies produced in the SiO2 network by the implantation, as simulated by stopping and range of ions in matter and measured by positron annihilation …