Considerations for interpretation of luminescence from silicon-on-insulator light emitting structures

Silicon-based, light emitting diodes (LEDs) and light emitting structures without electrical contacts have been integrated on silicon-on-insulator (SOI) wafers. The room temperature characterization of these samples using electro- and photo-luminescence is described. All samples emit at 1150 nm near the band-edge of Si, and samples that receive Er implantation emit additionally at a band centered at 1550 nm. Photoluminescence from the SOI …