Journal article
A kinetic model for the oxidation of silicon germanium alloys
Abstract
We propose a complete model for the oxidation of silicon germanium. Our model includes the participation of both silicon and germanium atoms in the oxidation process and the replacement by silicon of germanium in mixed oxides. Our model is capable of predicting, as a function of time, the oxide thickness, the profile of the silicon in the underlying alloy, and the profile of germanium in the oxide. The parameters of the model vary with …
Authors
Rabie MA; Haddara YM; Carette J
Journal
Journal of Applied Physics, Vol. 98, No. 7,
Publisher
AIP Publishing
Publication Date
October 1, 2005
DOI
10.1063/1.2060927
ISSN
0021-8979