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A kinetic model for the oxidation of silicon...
Journal article

A kinetic model for the oxidation of silicon germanium alloys

Abstract

We propose a complete model for the oxidation of silicon germanium. Our model includes the participation of both silicon and germanium atoms in the oxidation process and the replacement by silicon of germanium in mixed oxides. Our model is capable of predicting, as a function of time, the oxide thickness, the profile of the silicon in the underlying alloy, and the profile of germanium in the oxide. The parameters of the model vary with …

Authors

Rabie MA; Haddara YM; Carette J

Journal

Journal of Applied Physics, Vol. 98, No. 7,

Publisher

AIP Publishing

Publication Date

October 1, 2005

DOI

10.1063/1.2060927

ISSN

0021-8979