Journal article
Direct observation of anti-phase boundaries in heteroepitaxy of GaSb thin films grown on Si(001) by transmission electron microscopy
Abstract
Unambiguous identification of anti-phase boundaries (APBs) in heteroepitaxial films of GaSb grown on Si has been so far elusive. In this work, we present conventional transmission electron microscopy (TEM) diffraction contrast imaging using superlattice reflections, in conjunction with convergent beam electron diffraction analysis, to determine a change in polarity across APBs in order to confirm the presence of anti-phase disorder. In-depth …
Authors
Woo SY; Vajargah SH; Ghanad-Tavakoli S; Kleiman RN; Botton GA
Journal
Journal of Applied Physics, Vol. 112, No. 7,
Publisher
AIP Publishing
Publication Date
October 1, 2012
DOI
10.1063/1.4756957
ISSN
0021-8979