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Atomically resolved EELS mapping of the...
Journal article

Atomically resolved EELS mapping of the interfacial structure of epitaxially strained LaNiO3/LaAlO3 superlattices

Abstract

The interfacial atomic structure of a metallic LaNiO3/LaAlO3 superlattice grown on a LaSrAlO4 substrate was investigated using a combination of atomically resolved electron energy loss spectroscopy (EELS) at the Al K, Al L2,3, Sr L2,3, Ni L2,3, La M4,5, and O K edges as well as hybridization mapping of selected features of the O K-edge fine structure. We observe an additional La1−xSrxAl1−yNiyO3 layer at the substrate-superlattice interface, possibly linked to diffusion of Al and Sr into the growing film or a surface reconstruction due to Sr segregation. The roughness of the LaNiO3/LaAlO3 interfaces is found to be on average around one pseudocubic unit cell. The O K-edge EELS spectra revealed reduced spectral weight of the prepeak derived from Ni-O hybridized states in the LaNiO3 layers. We rule out oxygen nonstoichiometry of the LaNiO3 layers and discuss changes in the Ni-O hybridization due to heterostructuring as possible origin.

Authors

Gauquelin N; Benckiser E; Kinyanjui MK; Wu M; Lu Y; Christiani G; Logvenov G; Habermeier H-U; Kaiser U; Keimer B

Journal

Physical Review B, Vol. 90, No. 19,

Publisher

American Physical Society (APS)

Publication Date

November 1, 2014

DOI

10.1103/physrevb.90.195140

ISSN

2469-9950

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