Direct observation of indium precipitates in silicon following high dose ion implantation

We present electron microscopy, electrical measurement and secondary ion mass spectroscopy (SIMS) characterization of silicon doped with indium to concentrations well above the assumed solid solubility. Samples have been prepared using ion implantation at an energy of 40 keV to achieve as-implanted indium concentrations up to 1 × 1020 cm−3, with post-implantation annealing performed at temperatures between 600 and 1050 °C. We provide direct …