GaP/GaAsP/GaP core–multishell nanowire heterostructures on (111) silicon

GaP/GaAsP/GaP segmented nanowires were grown by gas source molecular beam epitaxy on silicon (111) substrates. The nanowires were grown by the vapour–liquid–solid process using Au nanoparticles. Transmission electron microscopy and energy dispersive x-ray spectroscopy indicated that the wires had wurtzite crystal structure with a core–multishell heterostructure. Stacking faults along the wire were removed after the growth-interrupted interfaces, indicating the potential for defect-free nanowires.