Journal article
Diffusion of Ge in Si1-xGex/Si single quantum wells in inert and oxidizing ambients
Abstract
The interdiffusion of Si/Si0.85Ge0.15/Si single quantum well (SQW) structures subjected to inert- and oxidizing-ambient annealing was investigated as a function of temperature (900–1200 °C) and time. Point defect injection allowed modification of the vacancy and interstitial mediated components of interdiffusion, DV and DI. Diffusion profiles of samples processed in inert and oxidizing ambients were similar, which indicates a vacancy-dominated …
Authors
Griglione M; Anderson TJ; Haddara YM; Law ME; Jones KS; van den Bogaard A
Journal
Journal of Applied Physics, Vol. 88, No. 3, pp. 1366–1372
Publisher
AIP Publishing
Publication Date
August 1, 2000
DOI
10.1063/1.373825
ISSN
0021-8979