Modeling silicon–germanium interdiffusion by the vacancy exchange and interstitial mechanisms

We present a comprehensive model for the interdiffusion of silicon (Si) and germanium (Ge) in single quantum well (SQW) structures. The model includes the vacancy exchange mechanism as well as interstitial diffusion. We explicitly account for lattice site conservation and the effect of Ge on the various material properties. We use well-established values from the literature without need of any adjustable parameters. The model fits experimental …