Journal article
RBS and ERDA study of ion beam synthesised amorphous gallium nitride
Abstract
Amorphous GaN was synthesised by Ga implantation into N-rich PECVD a-SiNx:H films after annealing between 200°C and 500°C. Similar implantation into Si-rich films did not form GaN. X-ray Photoelectron Spectroscopy (XPS) demonstrated the presence of GaN bonds in the former, but not the latter, case. Rutherford backscattering (RBS) and Elastic Recoil Detection Analysis (ERDA) demonstrated that implanted Ga substituted for Si in the N-rich films …
Authors
Barradas NP; Almeida SA; Jeynes C; Knights AP; Silva SRP; Sealy BJ
Journal
Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms, Vol. 148, No. 1-4, pp. 463–467
Publisher
Elsevier
Publication Date
January 1999
DOI
10.1016/s0168-583x(98)00702-2
ISSN
0168-583X