Journal article
Positron characterization of defects formed during solid phase epitaxy of cobalt silicide
Abstract
Cobalt films of thickness nm have been deposited on Si(100) substrates and subsequently annealed to temperatures of 400, 500, 600 and for 2 h. These anneals resulted in the formation of overlayers consisting of Co , CoSi and (600 and ). The various phases are easily distinguishable using both Rutherford backscattering (RBS) and positron annihilation spectroscopy (PAS). The values of the Doppler broadening S parameter for CoSi and (formed …
Authors
Knights AP; Ponj?e MWG; Simpson PJ; Zinke-Allmang M; Carlow GR
Journal
Semiconductor Science and Technology, Vol. 12, No. 2,
Publisher
IOP Publishing
Publication Date
February 1, 1997
DOI
10.1088/0268-1242/12/2/004
ISSN
0268-1242