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Enhanced Block Copolymer Lithography Using...
Journal article

Enhanced Block Copolymer Lithography Using Sequential Infiltration Synthesis

Abstract

Block copolymer lithography is a promising approach to massively parallel, high-resolution, and low-cost patterning, but the inherently low etch resistance of polymers has limited its applicability to date. In this work, this challenge is overcome by dramatically increasing the plasma etch contrast of polystyrene-block-poly(methyl methacrylate) (PS-b-PMMA) using spatially localized sequential infiltration synthesis (SIS) of alumina. The PMMA …

Authors

Tseng Y-C; Peng Q; Ocola LE; Elam JW; Darling SB

Journal

The Journal of Physical Chemistry C, Vol. 115, No. 36, pp. 17725–17729

Publisher

American Chemical Society (ACS)

Publication Date

September 15, 2011

DOI

10.1021/jp205532e

ISSN

1932-7447