Journal article
A 4-mW Monolithic CMOS LNA at 5.7GHz with the Gate Resistance Used for Input Matching
Abstract
Design and measured results of a fully integrated 5.7-GHz CMOS low-noise amplifier (LNA) is presented. To design this LNA, the parasitic input resistance of a metal-oxide-semiconductor field-effect transistor (MOSFET) is converted to 50 $\Omega$ by a simple $L$–$C$ network, hence eliminating the need for source degeneration. It is shown, by means of compact expressions, that this matching method enhances the effective transconductance of the …
Authors
Asgaran S; Deen MJ; Chen C-H
Journal
IEEE Photonics Technology Letters, Vol. 16, No. 4, pp. 188–190
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Publication Date
April 1, 2006
DOI
10.1109/lmwc.2006.872128
ISSN
1041-1135