Continuous current and surface potential models for undoped and lightly doped double-gate metal-oxide-semiconductor field-effect transistors

We have introduced a continuous, explicit, surface potential model for symmetric undoped and lightly doped double gate metal-oxide-semiconductor field-effect transistor devices. The surface potential model considered both hole and electron quasi-Fermi potential effects. An explicit current model has been introduced in terms of both source and drain charge densities at which hole and electron quasi-Fermi level or IMREFs are defined. The …