Impact of the fringing capacitance at the back of thin-film transistors

Analysis of the fringing capacitance at the “back” surface of the semiconducting film in thin-film transistors (TFTs) indicates that this capacitance contributes to the enhancement of the channel current by two components, ΔID and ΔIL. Because of similarities in the output characteristics, the component ΔID is compared to the channel length modulation in the TFT operating in the saturation regime at high drain bias voltages VD. Similarly, the …