A new 1/ f noise model for metal-oxide-semiconductor field-effect transistors in saturation and deep saturation

A new 1/f noise model for metal-oxide-semiconductor field-effect transistors (MOSFETs) in saturation and deep saturation based on the Hooge’s mobility fluctuation (MF) noise expression is presented. The new model uses detailed one-dimensional expressions of carrier number per unit length n(x) and channel potential V(x) varying with channel position x to calculate the gate referred noise spectral density SVG(f) in both saturation and deep saturation. The analytic variation of both n(x) and V(x) with x has been corroborated with a two-dimensional device simulator. In addition, new formulas for 1/f noise in MOSFETs based on the number fluctuation (NF) model are also presented. The theoretical results of SVG(f) and the drain current noise spectral density SID(f) versus biasing voltages, using the MF model, are in better agreement to the experimental results than the theoretical results of SVG(f) and SID(f) based on the NF model.