Journal article
Contact effects and extraction of intrinsic parameters in poly(3-alkylthiophene) thin film field-effect transistors
Abstract
We report on contact effects in polymeric thin film transistors based on poly(3-octylthiophene) and poly(3-hexadecylthiophene) with gold contact electrodes and in the bottom contact configuration. A method to extract the intrinsic channel mobility from the measured extrinsic mobility over a broad range of gate voltage is presented. This method uses the I-V characteristics of the transistor in its reverse mode operation. The results show that …
Authors
Deen MJ; Kazemeini MH; Holdcroft S
Journal
Journal of Applied Physics, Vol. 103, No. 12,
Publisher
AIP Publishing
Publication Date
June 15, 2008
DOI
10.1063/1.2942400
ISSN
0021-8979