Journal article
High frequency noise of MOSFETs I Modeling
Abstract
In this paper, a model is proposed which can predict accurately both ac and noise performance (all four noise parameters: minimum noise figure NFmin, equivalent noise resistance Rn, optimized source resistance Ropt and reactance Xopt) of MOSFETs based on s-parameter and noise measurements at microwave frequencies. This model includes the relevant high frequency noise sources (i.e. the channel thermal noise, the induced gate noise and its …
Authors
Chen CH; Deen MJ
Journal
Solid-State Electronics, Vol. 42, No. 11, pp. 2069–2081
Publisher
Elsevier
Publication Date
November 1998
DOI
10.1016/s0038-1101(98)00192-0
ISSN
0038-1101