Temperature effects on heavily doped polycrystalline silicon

The effects of operating temperature and current density on the resistivity of low-pressure chemical-vapor-deposition polycrystalline silicon heavily doped with different impurities, phosphorous (3.1×1020 cm−3), arsenic (4.6×1020 cm−3), or boron (3.1×1020 cm−3), were studied. The resistivity of the films was measured over a wide range of temperatures (15–195 °C) and current levels (1–20 mA). The arsenic-doped polycrystalline silicon results …