Low frequency noise in polysilicon-emitter bipolar junction transistors

This paper describes experimental results on low frequency noise in several types of polysilicon-emitter NPN bipolar junction transistors. The experimental data were modelled using a combination of 1/f noise, generation-recombination noise (g-r), and shot noise, and good agreement between model calculations and experimental measurements were obtained. Observed differences in the experimental low frequency noise spectra of devices with similar …