A physical model for the edge effects in narrow-width MOSFETs

This paper presents a detailed physical model for the experimentally determined parameters of the edge effects in narrow width MOSFETs. From experiments, it was found that these edge effects are composed of a parasitic resistance (RP) in series with the intrinsic device, a parallel parasitic conductance (GP) in parallel with the intrinsic device, and a channel width reduction (ΔW). It was found that both the effective channel width WEFF (= Wmsk − ΔW) and the absolute value of GP increased with gate bias, and that GP was negative. The physical origin of GP is described and detailed comparisons between the experimental results of Iedg, GP and Wedg, and those calculated from the physical model using the fabrication details of the narrow width MOSFETs are discussed.