Journal article
Effect of Forward and Reverse Substrate Biasing on Low-Frequency Noise in Silicon PMOSFETs
Abstract
The forward body biasing improves the low-frequency noise performance of p-channel metal-oxide semiconductor (PMOS) transistors by about 8 dB/V. Therefore, for analog design, forward body biasing may be preferred if noise is a concern. This is in agreement with the improvement of other MOSFET parameters such as the decrease of the threshold voltage ($V_{T}$) or the increase of unity current-gain frequency ($f_{T}$) on forward substrate- (or …
Authors
Deen MJ; Marinov O
Journal
IEEE Transactions on Electron Devices, Vol. 49, No. 3,
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Publication Date
March 1, 2002
DOI
10.1109/16.987110
ISSN
0018-9383