Organic Thin-Film Transistors: Part I—Compact DC Modeling

A generic analytical model for the current–voltage characteristics of organic thin-film transistors (OTFTs) is derived. Based on this generic model, a TFT compact dc model that meets the requirements for compact modeling, including for computer circuit simulators, is proposed. The models are fully symmetrical, and the TFT compact dc model covers all regimes of TFT operation—linear and saturation above threshold, subthreshold, and reverse biasing. The empirical fitting parameters are mostly eliminated from the characteristic equations. The developed models are also in close correspondence to several physical, parametric, and limiting models for current–voltage and mobility characteristics. An essential practical feature of the TFT compact dc model is that the model is both upgradable and reducible, allowing for easier implementation and modifications and also simultaneously allowing for separation of characterization techniques. This allows for systematic fitting of experimental data with large scattering in the values, but at the same time, preserving consistently the OTFT behavior in the model.