A New Voltage Transient Technique for Deep‐Level Studies in Depletion‐Mode Field‐Effect Transistors

A new variation of deep‐level transient spectroscopy, suitable for depletion‐mode field‐effect transistors, is presented. It is similar to the conductance deep‐level transient spectroscopy but does not require simultaneous measurement of the transconductance or the mobility for calculation of the trap concentrations. It is also independent of the transistor size and is very sensitive. The technique is demonstrated with measurements of …