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The Low Frequency Noise in Reverse Biased...

Journal article

The Low Frequency Noise in Reverse Biased Rectifier Diodes

Abstract

The low frequency noise in rectifier diodes in the breakdown regime is investigated as a function of the reverse current. A dynamic “competition” between impact ionization and microplasma switching explains the nonmonotonic, repetitive and correlated variations in the breakdown dynamic resistance $(dV/dI)$ slope, the noise level, and the noise waveform.

Authors

Marinov O; Deen MJ; Loukanov V; Velikov V

Journal

IEEE Transactions on Electron Devices, Vol. 49, No. 1, pp. 184–187

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Publication Date

January 1, 2002

DOI

10.1109/16.974768

ISSN

0018-9383

Associated Experts

Jamal Deen

Professor, Faculty of Engineering

Labels

Fields of Research (FoR)

40 Engineering 4009 Electronics, sensors and digital hardware

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