Journal article
Channel Noise Modeling of Deep Submicron MOSFETs
Abstract
This brief presents a new channel noise model using the channel length modulation (CLM) effect to calculate the channel noise of deep submicron MOSFETs. Based on the new channel noise model, the simulated noise spectral densities of the devices fabricated in a 0.18 $\mu\hbox{m}$ CMOS process as a function of channel length and bias condition are compared to the channel noise directly extracted from RF noise measurements. In addition, the hot …
Authors
Chen C-H; Deen MJ
Journal
IEEE Transactions on Electron Devices, Vol. 49, No. 8,
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Publication Date
8 2002
DOI
10.1109/ted.2002.801229
ISSN
0018-9383