Journal article
A Model for the Performance Analysis and Design of Waveguide P-I-N Photodetectors
Abstract
A model to investigate the frequency response of waveguide (WG) p-i-n photodetectors (PDs) is presented. The model is based on the 2-D position-dependent distribution of carriers in the device and the results show that the contribution to the total current mainly comes from a small length of the PD measured from its input end. The effect of carrier trapping at a heterointerface has also been considered to study the frequency dependence of the …
Authors
Das NR; Deen MJ
Journal
IEEE Transactions on Electron Devices, Vol. 52, No. 4, pp. 465–472
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Publication Date
April 2005
DOI
10.1109/ted.2005.845152
ISSN
0018-9383