Journal article
NbNx-NbOy-PbInzJosephson junctions with R.F. oxidised tunneling barriers
Abstract
We report the fabrication of high quality Josephson tunnel junctions made by the r.f. sputter-deposition method. The characteristics of these junctions were determined at 4.2°K as a function of the following fabrication parameters: the substrate temperature, the sputtering power during base electrode deposition, and the r.f. oxidation time for the barrier. We have obtained critical current densities from 90 to 800 Amperes/cm2which depended …
Authors
Deen M; Thompson E
Journal
IEEE Transactions on Magnetics, Vol. 19, No. 3, pp. 954–956
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Publication Date
5 1983
DOI
10.1109/tmag.1983.1062454
ISSN
0018-9464