Journal article
Low temperature dependence of the hole impact ionisation constants determined from PMOS transistors
Authors
Deen MJ; Zuo ZP
Journal
Electronics Letters, Vol. 26, No. 23, pp. 1975–1977
Publisher
Institution of Engineering and Technology (IET)
Publication Date
November 8, 1990
DOI
10.1049/el:19901277
ISSN
0013-5194