Journal article
Analytical Modeling of Mosfets Channel Noise and Noise Parameters
Abstract
Simple analytical expressions for MOSFETs noise parameters are developed and experimentally verified. The expressions are based on analytical modeling of MOSFETs channel noise, are explicit functions of MOSFETs geometry and biasing conditions, and hence are useful for circuit design purposes. Good agreement between calculated and measured data is demonstrated. Moreover, it is shown that including induced gate noise in the modeling of MOSFETs …
Authors
Asgaran S; Deen MJ; Chen C-H
Journal
IEEE Transactions on Electron Devices, Vol. 51, No. 12, pp. 2109–2114
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Publication Date
12 2004
DOI
10.1109/ted.2004.838450
ISSN
0018-9383