Special Issue on Advanced Compact Models and 45-nm Modeling Challenges

THIS Special Issue is devoted to research and development activities on emerging compact MOS models for advanced integrated circuit simulation using next is devoted to research and development activities on emerging compact MOS models for advanced integrated circuit simulation using nextMOS models for advanced integrated circuit simulation using next models for advanced integrated circuit simulation using next is devoted to research and development activities on emerging compact MOS models for advanced integrated circuit simulation using next is devoted to research and development activities on emerging compact MOS models for advanced integrated circuit simulation using nextMOS models for advanced integrated circuit simulation using next models for advanced integrated circuit simulation using nextMOS models for advanced integrated circuit simulation using next is devoted to research and development activities on emerging compact MOS models for advanced integrated circuit simulation using nextMOS models for advanced integrated circuit simulation using next models for advanced integrated circuit simulation using next models for advanced integrated circuit simulation using next is devoted to research and development activities on emerging compact MOS models for advanced integrated circuit simulation using nextMOS models for advanced integrated circuit simulation using next models for advanced integrated circuit simulation using nextMOS models for advanced integrated circuit simulation using nextMOS models for advanced integrated circuit simulation using next models for advanced integrated circuit simulation using next models for advanced integrated circuit simulation using nextMOS models for advanced integrated circuit simulation using next models for advanced integrated circuit simulation using nextMOS models for advanced integrated circuit simulation using next models for advanced integrated circuit simulation using next models for advanced integrated circuit simulation using next models for advanced integrated circuit simulation using next-generation silicon technology. The continuous scaling of CMOS devices to the sub-90-nm regime has resulted in higher device density, faster circuit speed, and lower power dissipation. Many new physical phenomena such as 2-D/3-D electrostatics, CLM, DIBL, remote surface roughness scattering, mobility degradation, impact ionization, band-to-band tunneling, velocity overshoot, self-heating, channel charge quantization, polysilicon depletion, RF behaviors, NQS effects, gate-induced drain leakage and noise, and discrete dopant become significant as the device dimension approaches its physical limit. Thus, accurate MOSFET models that include the observed physical phenomena as well as models for both analog and digital circuits are crucial to design and optimize advanced VLSI circuits for nanoscale CMOS technology models that include the observed physical phenomena as well as models for both analog and digital circuits are crucial to design and optimize advanced VLSI circuits for nanoscale CMOS technologyVLSI circuits for nanoscale CMOS technology models that include the observed physical phenomena as well as models for both analog and digital circuits are crucial to design and optimize advanced VLSI circuits for nanoscale CMOS technology models that include the observed physical phenomena as well as models for both analog and digital circuits are crucial to design and optimize advanced VLSI circuits for nanoscale CMOS technologyVLSI circuits for nanoscale CMOS technologyVLSI circuits for nanoscale CMOS technology models that include the observed physical phenomena as well as models for both analog and digital circuits are crucial to design and optimize advanced VLSI circuits for nanoscale CMOS technologyVLSI circuits for nanoscale CMOS technology technology models that include the observed physical phenomena as well as models for both analog and digital circuits are crucial to design and optimize advanced VLSI circuits for nanoscale CMOS technologyVLSI circuits for nanoscale CMOS technologyVLSI circuits for nanoscale CMOS technologyVLSI circuits for nanoscale CMOS technology. The currently available compact models, based on the regional approach, are facing enormous challenges in modeling the observed physical phenomena in the sub-90-nm technologies.