Finding the asymmetric parasitic source and drain resistances from the a.c. conductances of a single MOS transistor

Layout asymmetry, processing, or hot-carrier stressing can give rise to unequal source and drain parasitic resistances in a MOSFET. In these cases, it is necessary to extract these resistances separately without the aid of other transistors. In this paper, we present a simple method to extract the source and drain parasitic resistances separately. This method, unlike earlier ones that depend on the measurements of the d.c. resistances of …