Journal article
Temperature dependence of breakdown voltages in separate absorption, grading, charge, and multiplication InP/InGaAs avalanche photodiodes
Abstract
In this paper, we investigate temperature dependence of breakdown voltage V/sub br/ from -40 to 110/spl deg/C in separate absorption, grading, charge, and multiplication (SAGCM) InP/InGaAs avalanche photodiodes (APD's) with a range of device parameters. The experimental data shows that V/sub br/ is approximately a linear function of temperature, with a temperature coefficient /spl eta//sub exp/ between 0.13 and 0.16 V//spl deg/C. A physical …
Authors
Ma CLF; Deen MJ; Tarof LE; Yu JCH
Journal
IEEE Transactions on Electron Devices, Vol. 42, No. 5, pp. 810–818
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Publication Date
5 1995
DOI
10.1109/16.381974
ISSN
0018-9383