Temperature dependence of breakdown voltages in separate absorption, grading, charge, and multiplication InP/InGaAs avalanche photodiodes

In this paper, we investigate temperature dependence of breakdown voltage V/sub br/ from -40 to 110/spl deg/C in separate absorption, grading, charge, and multiplication (SAGCM) InP/InGaAs avalanche photodiodes (APD's) with a range of device parameters. The experimental data shows that V/sub br/ is approximately a linear function of temperature, with a temperature coefficient /spl eta//sub exp/ between 0.13 and 0.16 V//spl deg/C. A physical model is developed and it demonstrates that V/sub br/ indeed varies linearly with temperature with a temperature coefficient /spl eta//sub the/ about 0.155 V//spl deg/C. It also explains successfully the small variation of /spl eta//sub exp/ among the APD's. Good agreement between the physical model predictions and experimental data of published InP-based APD's is also obtained. This good agreement demonstrates that the proposed physical model is appropriate to model the temperature dependent characteristics in any InP-based APD's.<>