Low-temperature electron cyclotron resonance chemical vapor deposition of very low resistivity TiN for InP metallization using metalorganic precursors

Titanium nitride (TiN) thin films were deposited onto Si and InP using the electron cyclotron resonance chemical vapor deposition technique. Tetrakis(dimethylamido)titanium (TDMATi) was used as a precursor. Depositions onto unheated substrates were carried out downstream of a nitrogen plasma. Stoichiometric (Ti:N≊1) and very low resistivity (43 μΩ cm) films were obtained at a deposition rate of 13 Å/min. The carbon and oxygen contaminants in …