Deformation-induced vacancy-type defects in GaAs

Semi-insulating undoped GaAs was plastically deformed and then investigated by positron-lifetime spectroscopy. Strains between 0 and 40% and temperatures of deformation of 450, 500, and 600 °C were investigated, with detailed investigations carried out for the lowest temperature of deformation. Between 0 and 4% strain, a reduction of the grown-in vacancy response takes place simultaneously with a slight increase in vacancy cluster size to two …