Journal article
Light emission from Si nanoclusters formed at low temperatures
Abstract
Photoluminescence (PL) from amorphous Si nanoclusters (Si-ncls) formed by thin-film deposition via electron-cyclotron resonance plasma-enhanced chemical vapor deposition followed by annealing at temperatures ⩽875°C has been investigated. We find that Si-ncls grow very slowly after their initial nucleation at low temperatures. An increase in the size of Si-ncls, which can be controlled by the annealing temperature, induces a redshift in the …
Authors
Pi XD; Zalloum OHY; Roschuk T; Wojcik J; Knights AP; Mascher P; Simpson PJ
Journal
Applied Physics Letters, Vol. 88, No. 10,
Publisher
AIP Publishing
Publication Date
March 6, 2006
DOI
10.1063/1.2183813
ISSN
0003-6951