Implantation profile of Na22 continuous energy spectrum positrons in silicon

The implantation profile of positrons emitted from a continuous energy spectrum source of Na22 in close proximity to a silicon target is modeled. The primary motivation is the use of positron lifetime spectroscopy to characterize layers of defects such as those created by ion irradiation, usually deemed accessible only to techniques which utilize slow positrons. The model combines the Makhov profile, used with considerable success to describe …