Journal article
Photoluminescence and positron annihilation spectroscopy of MeV Si+ ion-irradiated SiyO1−y:Er (y≈1/3) thin films
Abstract
Amorphous erbium-doped silicon oxide (SiyO1−y:Er, y≥1/3) thin films are currently under investigation as a luminescent material system for complementary metal-oxide semiconductor compatible light emitters. We have grown films with y≈1/3 and investigated their properties using both positron annihilation and photoluminescence (PL) spectroscopies. Films were characterized “as deposited,” following irradiation with 1 MeV Si+ ions and after …
Authors
Blakie DE; Zalloum OHY; Wojcik J; Irving EA; Knights AP; Mascher P; Simpson PJ
Journal
Journal of Applied Physics, Vol. 105, No. 5,
Publisher
AIP Publishing
Publication Date
March 1, 2009
DOI
10.1063/1.3086644
ISSN
0021-8979