Sulfur Passivation of InP/InGaAs Metal‐Semiconductor‐Metal Photodetectors

In this paper, we report on the fabrication of high‐performance In0.53Ga0.47As/InP metal‐semiconductor‐metal photodetectors (MSM‐PDs) using sulfur passivation of the InP surface. Sulfur passivation resulted in a more reliable and reproducible performance, more consistency from device to device, and improved aging stability. The InGaAs MSM‐PDs (2 × 2 μm) have a dark current of about 200 ± 10 nA (at 10 V), a low capacitance of 200 ± 10 fF, a …