Experts has a new look! Let us know what you think of the updates.

Provide feedback
Home
Scholarly Works
Defect Depth Profile in CdTe :  CI  by Positron...
Journal article

Defect Depth Profile in CdTe :  CI  by Positron Annihilation

Abstract

Depth resolved defect profiles have been obtained from samples using both positron lifetime spectroscopy and Doppler‐broadening of annihilation radiation spectra. The dominant defect species was identified as the chlorine‐vacancy complex or A center. The defect concentration in the bulk was found to be , with a much higher near‐surface concentration, in agreement with chlorine concentration profiles obtained using the radiotracer sectioning …

Authors

Peng ZL; Simpson PJ; Mascher P

Journal

Electrochemical and Solid-State Letters, Vol. 3, No. 3, pp. 150–152

Publisher

The Electrochemical Society

Publication Date

1999

DOI

10.1149/1.1390985

ISSN

1099-0062