Effect of annealing on the defect structure in a -SiC:H films

The annealing behavior of amorphous, hydrogenated silicon carbide films in the range 400–900 °C was studied by optical characterization methods, 15N hydrogen profiling, and defect profiling using a variable energy positron beam. The films were deposited in an electron cyclotron resonance chemical vapor deposition system using ditertiary butyl silane [SiH2(C4H9)2] as the monosource for silicon and carbon. As-deposited films were found to contain …