Journal article
Annealing studies of vacancies in proton irradiated silicon
Abstract
Annealing of vacancies produced by heavy proton irradiation of float-zone (Fz) and P-doped Czochralski-grown (Cz) silicon has been investigated by positron lifetime spectroscopy. In Fz-Si divacancies are retained after irradiation, and these defects are completely annealed out at 700 °C. In Cz P-doped silicon, impurities are found to enhance both the amount of retained vacancies as well as the tendency for vacancy clustering. Two annealing …
Authors
Dannefaer S; Mascher P; Kerr D
Journal
Journal of Applied Physics, Vol. 73, No. 8, pp. 3740–3743
Publisher
AIP Publishing
Publication Date
April 15, 1993
DOI
10.1063/1.352905
ISSN
0021-8979