On the contribution of vacancy complexes to the saturation of the carrier concentration in zinc doped InP

Positron annihilation spectroscopy on Zn-doped InP has revealed the presence of a defect with a positron lifetime of ∼330 ps in samples in which the carrier concentration has saturated. This lifetime is attributed to a complex involving vacancies and Zn atoms. A model is proposed in which this complex has a (−/0) level near the bottom of the band gap, and undergoes a large inward lattice relaxation upon the transition to the neutral charge …