The role of vicinal silicon surfaces in the formation of epitaxial twins during the growth of III-V thin films

We examine the role of vicinal surface steps in the formation and propagation of twins during the growth of epitaxial III-V thin films (GaAs, InP, GaSb, AlSb) on silicon substrates. This is achieved through the combined use of two-dimensional X-ray diffraction and conventional transmission electron microscopy techniques, which allow for both a macro and nano/micro characterization of the material systems. Observed is a systematic suppression of …