Journal article
Strain relief and AlSb buffer layer morphology in GaSb heteroepitaxial films grown on Si as revealed by high-angle annular dark-field scanning transmission electron microscopy
Abstract
The interfacial misfit (IMF) dislocation array of an epitaxial GaSb film on a Si substrate has been imaged with high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM). The mismatch strain accommodation through dislocation formation has been investigated using geometric phase analysis (GPA) on HAADF-STEM images with atomic resolution to probe the defects’ local strain distribution. These measurements indicate that …
Authors
Vajargah SH; Couillard M; Cui K; Tavakoli SG; Robinson B; Kleiman RN; Preston JS; Botton GA
Journal
Applied Physics Letters, Vol. 98, No. 8,
Publisher
AIP Publishing
Publication Date
February 21, 2011
DOI
10.1063/1.3551626
ISSN
0003-6951