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Cooling Rate in Diode Laser Bonding
Journal article

Cooling Rate in Diode Laser Bonding

Abstract

Diode laser die bonding parameters were measured for the cases of slow cool and rapid cool die bonding processes. The thermal strain, solder composition and structure, thermal impedance, and bond strength of InP based diode lasers bonded to AlN chip carriers using pre-deposited Au–Sn solder were examined. Relative to the rapid cool process, the slow cool process was found on average: to induce greater strain in the laser chips; to exhibit a …

Authors

Fritz MA; Cassidy DT

Journal

IEEE Transactions on Components Packaging and Manufacturing Technology, Vol. 27, No. 1, pp. 147–154

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Publication Date

3 2004

DOI

10.1109/tcapt.2004.825749

ISSN

2156-3950