A novel atmospheric pressure technique for the deposition of ZnS by atomic layer epitaxy using dimethylzinc

We report on the results of a novel atomic layer epitaxy (ALE) deposition system which performs deposition at atmospheric pressure. Polycrystalline thin films of ZnS have been deposited using the gaseous sources dimethylzinc and hydrogen sulphide. Depositions were carried out at substrate temperatures in the range 25 to 500 ° C. The results of several bulk and surface analytical techniques are presented which suggest that the films are stoichiometric and of high purity and crystal quality. The methodology of system operation is discussed as is the dependence of film quality upon process parameters.