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The effect of GaAs(100) surface preparation on the...
Journal article

The effect of GaAs(100) surface preparation on the growth of nanowires

Abstract

The influence of GaAs(100) substrate surface preparation on Au-catalysed GaAs nanowires was studied. Elongated pits of varying dimensions and orientation were formed on GaAs(100) substrates depending on the interaction with Au and surface oxides. The resulting surface topography is shown to influence the density and orientation of nanowires. [111] B-oriented nanowires nucleated from Au particles lying on the sidewall facets of the pits, while [011]-oriented nanowires nucleated from Au particles lying outside the pits.

Authors

Ghosh SC; Kruse P; LaPierre RR

Journal

Nanotechnology, Vol. 20, No. 11,

Publisher

IOP Publishing

Publication Date

March 18, 2009

DOI

10.1088/0957-4484/20/11/115602

ISSN

0957-4484

Labels

Fields of Research (FoR)

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